Patents/Inventors

Chung-chieh Hsu

HsinchuTW2 patents

2 Patents

US123082302025
High Electron Mobility Transistor (HEMT) Having an Indium-containing Layer and Method of Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US115519272023
High Electron Mobility Transistor (HEMT) Having an Indium-containing Layer and Method of Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites