Patents/Inventors

Chung-chiang Min

ZhubeiTW10 patents

12 Patents

US125018422025
Non-volatile Memory Device and Manufacturing Technology
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US124777462025
Method of Forming Memory Cell
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US124446502025
Etch Stop Layer for Memory Device Formation
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US123546952025
Trench Formation Scheme for Programmable Metallization Cell to Prevent Metal Redeposit
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US123027672025
Buffer Layer in Memory Cell to Prevent Metal Redeposition
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122741822025
Sidewall Spacer Structure for Memory Cell
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US120274202024
Etch Stop Layer for Memory Device Formation
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US119250322024
Memory Device with Flat-top Bottom Electrodes and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites
US118189622023
Sidewall Spacer Structure for Memory Cell
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US117857862023
Trench Formation Scheme for Programmable Metallization Cell to Prevent Metal Redeposit
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US117858612023
Semiconductor Structure and Method of Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US116659112023
Method of Forming Memory Cell
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites