4 Patents
- US124083632025Semiconductor Device with Phosphorus-doped Epitaxial Features
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US124023542025Epitaxial Features in Semiconductor Devices and Manufacturing Method of the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122794512025Semiconductor Device Including Source/drain Feature with Multiple Epitaxial Layers
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US118627122024Methods of Semiconductor Device Fabrication Including Growing Epitaxial Features Using Different Carrier Gases
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites