35 Patents
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Parabellum Strategic Opportunities Fund LLC
0 cites - US124396382025FET with Wrap-around Silicide and Fabrication Methods Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US123826552025Transistors Having Vertical Nanostructures
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US123601532025In-line Device Electrical Property Estimating Method and Test Structure of the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - 0 cites
- US123362612025Contacts for Highly Scaled Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US122182262025Methods of Fabricating Semiconductor Devices Having Gate-all-around Structure with Inner Spacer Last Process
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121989862025Dual Channel Gate All Around Transistor Device and Fabrication Methods Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121486732024Finfet Devices and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121488362024Gate-all-around Structure and Methods of Forming the Same
Parabellum Strategic Opportunities Fund LLC
0 cites - US121258972024Air Spacers in Transistors and Methods Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121192702024Hybrid Source Drain Regions Formed Based on Same Fin and Methods Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121194042024Gate All Around Structure with Additional Silicon Layer and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120878412024Method of Manufacturing Gate Spacers with Stepped Sidewalls by Removing Vertical Portions of a Helmet Layer
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120092152024Semiconductor Device Structure with Silicide Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120092162024Methods of Forming Silicide Contact in Field-effect Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119964832024FET with Wrap-around Silicide and Fabrication Methods Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119843632024Dual Silicide Structure and Methods Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119618922024Contacts for Highly Scaled Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119294172024Contacts for Highly Scaled Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- 0 cites
- US118375062023Finfet Devices and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117768542023Semiconductor Structure with Hybrid Nanostructures
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117770092023Contacts for Highly Scaled Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117770332023Transistors Having Vertical Nanostructures
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117640652023Methods of Forming Silicide Contact in Field-effect Transistors
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US117356662023Gate All Around Structure with Additional Silicon Layer and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117282212023Air Spacers in Transistors and Methods Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117215942023Dual Channel Gate All Around Transistor Device and Fabrication Methods Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd
0 cites - US116950762023FET with Wrap-around Silicide and Fabrication Methods Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116642302023Semiconductor Device Structure with Silicide
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116372072023Gate-all-around Structure and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US115631042023Semiconductor Devices Having Air-gap Spacers
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites