9 Patents
- US123175482025Optimized Proximity Profile for Strained Source/drain Feature and Method of Fabricating Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US121258792024Epitaxial Source/drain Structure and Method
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120392322024Pulse-width Modulation Signal Observation Circuit and Hardware-in-the-loop Simulation Device Having the Same
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
0 cites - US120028542024Semiconductor Device and Method of Manufacture
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US118241022023Optimized Proximity Profile for Strained Source/drain Feature and Method of Fabricating Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd
0 cites - US117842222023Epitaxial Source/drain Structure and Method
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites