16 Patents
- US124648092025Vertical Field Effect Transistor with Minimal Contact to Gate Erosion
International Business Machines Corporation
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- US122496432025Stacked Planar Field Effect Transistors with 2D Material Channels
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US122437702025Hard Mask Removal Without Damaging Top Epitaxial Layer
International Business Machines Corporation
0 cites - US121366562024Semiconductor Structure Having Two-dimensional Channel
International Business Machines Corporation
0 cites - US120094222024Self Aligned Top Contact for Vertical Transistor
International Business Machines Corporation
0 cites - 0 cites
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- US119014402024Sacrificial Fin for Self-aligned Contact Rail Formation
International Business Machines Corporation
0 cites - US118760232024Conformal Film Thickness Determination Using Angled Geometric Features and Vertices Tracking
International Business Machines Corporation
0 cites - US118761242024Vertical Transistor Having an Oxygen-blocking Layer
International Business Machines Corporation
0 cites - US117422462023Local Isolation of Source/drain for Reducing Parasitic Capacitance in Vertical Field Effect Transistors
International Business Machines Corporation
0 cites - US117423502023Metal Gate N/P Boundary Control by Active Gate Cut and Recess
International Business Machines Corporation
0 cites - 0 cites
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- US116463732023Vertical Field Effect Transistor with Bottom Spacer
International Business Machines Corporation
0 cites