30 Patents
- US125989702026Top via on Subtractively Etched Conductive Line
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US125816672026Multistack Metal-insulator-metal (MIM) Structure Using Spacer Formation Process for Heterogeneous Integration with Discrete Capacitors
International Business Machines Corporation
0 cites - US125753992026Interconnect Structure Including Vertically Stacked Power and Ground Lines
International Business Machines Corporation
0 cites - US125507092026Semiconductor Device Including a Porous Dielectric Layer, and Method of Forming the Semiconductor Device
Adeia Semiconductor Solutions LLC
0 cites - 0 cites
- US124827462025Early Backside First Power Delivery Network
International Business Machines Corporation
0 cites - US124008592025Metal Hard Mask for Precise Tuning of Mandrels
International Business Machines Corporation
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- US122180032025Selective ILD Deposition for Fully Aligned via with Airgap
Adeia Semiconductor Solutions LLC
0 cites - US121564862024Horizontal RRAM Device and Architecture for Variability Reduction
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US121069632024Self Aligned Pattern Formation Post Spacer Etchback in Tight Pitch Configurations
Tessera LLC
0 cites - US119904102024Top via Interconnect Having a Line with a Reduced Bottom Dimension
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US119617592024Interconnects Having Spacers for Improved Top via Critical Dimension and Overlay Tolerance
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US119554242024Semiconductor Device Including a Porous Dielectric Layer, and Method of Forming the Semiconductor Device
Adeia Semiconductor Solutions LLC
0 cites - 0 cites
- US118760232024Conformal Film Thickness Determination Using Angled Geometric Features and Vertices Tracking
International Business Machines Corporation
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- US118239982023Top via with Next Level Line Selective Growth
International Business Machines Corporation
0 cites - US118044062023Top via Cut Fill Process for Line Extension Reduction
International Business Machines Corporation
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- US117355242023Electrical Device Having Conductive Lines with Air Gaps Therebetween and Interconnects Without Exclusion Zones
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - 0 cites
- US116705102023Self Aligned Pattern Formation Post Spacer Etchback in Tight Pitch Configurations
Tessera LLC
0 cites - US116705422023Stepped Top via for via Resistance Reduction
International Business Machines Corporation
0 cites - US116462212023Self-aligned Pattern Formation for a Semiconductor Device
International Business Machines Corporation
0 cites - 0 cites
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- US115748642023Semiconductor Device Including a Porous Dielectric Layer, and Method of Forming the Semiconductor Device
Tessera LLC
0 cites