11 Patents
- US125987612026Diode Including a Trench Electrode Subdivided Into at Least First and Second Parts
Infineon Technologies Austria AG
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- US122836212025Semiconductor Device Having a Transistor with Trenches and Mesas
Infineon Technologies Austria AG
0 cites - US122666802025Voltage-controlled Switching Device with Resistive Path
Infineon Technologies Dresden GmbH & Co. KG
0 cites - US122243162025Semiconductor Device Including Insulated Gate Bipolar Transistor
Infineon Technologies Austria AG
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- US116109762023Semiconductor Device Including a Transistor with One or More Barrier Regions
Infineon Technologies Austria AG
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