36 Patents
- US125817192026Fabrication of Silicon Germanium Channel and Silicon/silicon Germanium Dual Channel Field-effect Transistors
International Business Machines Corporation
0 cites - 0 cites
- US124083692025Vertical Transport Field Effect Transistors Having Different Threshold Voltages Along the Channel
International Business Machines Corporation
0 cites - US124084312025Gate Stack Quality for Gate-all-around Field-effect Transistors
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US123962252025Method to Release Nano Sheet After Nano Sheet Fin Recess
International Business Machines Corporation
0 cites - 0 cites
- US122306762025Nanosheet Device with Tri-layer Bottom Dielectric Isolation
International Business Machines Corporation
0 cites - US121838262024Vertical Field Effect Transistor with Low-resistance Bottom Source-drain Contact
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US121563952024Metal Gate Patterning for Logic and SRAM in Nanosheet Devices
International Business Machines Corporation
0 cites - US121366712024Gate-all-around Field-effect Transistor Having Source Side Lateral End Portion Smaller Than a Thickness of Channel Portion and Drain Side Lateral End Portion
International Business Machines Corporation
0 cites - US121320982024Uniform Interfacial Layer on Vertical Fin Sidewalls of Vertical Transport Field-effect Transistors
International Business Machines Corporation
0 cites - US120949492024Fin-type Field Effect Transistor Having a Wrap-around Gate with Bottom Isolation and Inner Spacers to Reduce Parasitic Capacitance
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - 0 cites
- US120274592024Integrated Circuit Device and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US120094222024Self Aligned Top Contact for Vertical Transistor
International Business Machines Corporation
0 cites - US119964802024Vertical Transistor with Late Source/drain Epitaxy
International Business Machines Corporation
0 cites - US119905302024Replacement-channel Fabrication of III-V Nanosheet Devices
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US119787832024Vertical Fin Field Effect Transistor Devices with Reduced Top Source/drain Variability and Lower Resistance
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US119490112024Vertical Transistor with Gate Encapsulation Layers
International Business Machines Corporation
0 cites - US119375212024Structure and Method to Fabricate Resistive Memory with Vertical Pre-determined Filament
International Business Machines Corporation
0 cites - US119234382024Field-effect Transistor with Punchthrough Stop Region
International Business Machines Corporation
0 cites - US118815052024Tri-layer STI Liner for Nanosheet Leakage Control
International Business Machines Corporation
0 cites - US118429982023Semiconductor Device and Method of Forming the Semiconductor Device
International Business Machines Corporation
0 cites - US118308772023Co-integrated Channel and Gate Formation Scheme for Nanosheet Transistors Having Separately Tuned Threshold Voltages
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US117840962023Vertical Transport Field-effect Transistors Having Germanium Channel Surfaces
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US117841222023Integrated Circuit Device and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US117569602023Multi-threshold Voltage Gate-all-around Transistors
International Business Machines Corporation
0 cites - US117569962023Formation of Wrap-around-contact for Gate-all-around Nanosheet FET
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US117424092023Replacement-channel Fabrication of III-V Nanosheet Devices
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US116824712023Dual Damascene Crossbar Array for Disabling a Defective Resistive Switching Device in the Array
International Business Machines Corporation
0 cites - US116597802023Phase Change Memory Structure with Efficient Heating System
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US116005932023Die Bonding Apparatus and Method and Substrate Bonding Apparatus and Method
SEMES CO., Ltd.
0 cites - 0 cites
- US115878372023Oxygen Vacancy Passivation in High-k Dielectrics for Vertical Transport Field Effect Transistor
International Business Machines Corporation
0 cites - 0 cites