32 Patents
- US125866452026Memory System, Operating Method of the Memory System, and Interface Circuit of the Memory System
Samsung Electronics Co., Ltd.
0 cites - US125674662026Nonvolatile Memory Devices and Methods of Operating the Nonvolatile Memory Devices
Samsung Electronics Co., Ltd.
0 cites - US125622102026Voltage Supply Circuit, Memory Device Including the Same, and Operating Method of Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US125385852026ESD Protection Circuitry, and Electronic Device Including ESD Protection Circuitry
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US125064682025Data Flip-flop Circuit of Nonvolatile Memory Device and Nonvolatile Memory Device Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US124628572025Nonvolatile Memory Package, Storage Device Including the Same, and Method of Operating Thereof
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US124565202025Non-volatile Memory Device, Storage Device Having the Same and Operating Method of Non-volatile Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US124311732025Memory Package Performing Training Operation Using Address-delay Mapping and Memory System Including the Same
Samsung Electronics Co., Ltd.
0 cites - US124242892025Method of Operating Memory Device and Memory Device Performing the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US124007242025Voltage Generation Circuit and Semiconductor Memory Device Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US123944602025Nonvolatile Memory Device and Memory System Including the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US122370462025Memory System Including an Interface Circuit Connecting a Controller and Memory
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US122177932025Data Transfer Circuits in Nonvolatile Memory Devices and Nonvolatile Memory Devices Including the Same
Samsung Electronics Co., Ltd.
0 cites - US122107732025Storage Device for Transmitting Data Having an Embedded Command in Both Directions of a Shared Channel, and a Method of Operating the Storage Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US121909422025Nonvolatile Memory Device and Operating Method with Operational Amplifier Having Feedback Path
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US121120712024Nonvolatile Memory Device Supporting High-efficiency I/O Interface
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US120739172024Memory Device That Includes a Duty Correction Circuit, Memory Controller That Includes a Duty Sensing Circuit, and Storage Device That Includes a Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US119841702024Nonvolatile Memory Device and Storage Device Including the Nonvolatile Memory Device
Samsung Electronics Co., Ltd.
0 cites - 0 cites
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- US118698602024Storage Device Generating Multi-level Chip Enable Signal and Operating Method Thereof
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US118106382023Memory Device Including Multiple Memory Chips and Data Signal Lines and a Method of Operating the Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US117565922023Memory Device Supporting DBI Interface and Operating Method of Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US117145792023Nonvolatile Memory Device Supporting High-efficiency I/O Interface
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US115942872023Nonvolatile Memory Device and Storage Device Including the Nonvolatile Memory Device
Samsung Electronics Co., Ltd.
0 cites - 0 cites