10 Patents
- US125818682026Half Metallic Heusler Multilayers with Perpendicular Magnetic Anisotropy
Samsung Electronics Co., Ltd.
0 cites - US123175082025Tuning Perpendicular Magnetic Anisotropy of Heusler Compound in MRAM Devices
SAMSUNG ELECTRONICS CO., Ltd
0 cites - US122741792025Seed Layer for Enhancing Tunnel Magnetoresistance with Perpendicularly Magnetized Heusler Films
International Business Machines Corporation
0 cites - 0 cites
- US120945082024Magnetic Tunneling Junction Switching with Parallel Spin-momentum Locked Spin Current
Samsung Electronics Co., Ltd.
0 cites - US119251242024Insertion Layers for Perpendicularly Magnetized Heusler Layers with Reduced Magnetic Damping
Samsung Electronics Co., Ltd.
0 cites - US118043212023Tunable Templating Layers for Perpendicularly Magnetized Heusler Films
Samsung Electronics Co., Ltd.
0 cites - US117514862023Templating Layers for Perpendicularly Magnetized Heusler Films/compounds
Samsung Electronics Co., Ltd.
0 cites - US116659792023Magnetic Junctions Having Enhanced Tunnel Magnetoresistance and Utilizing Heusler Compounds
Samsung Electronics Co., Ltd.
0 cites - US115577212023Heusler Compounds with Non-magnetic Spacer Layer for Formation of Synthetic Anti-ferromagnets (SAF)
Samsung Electronics Co., Ltd.
0 cites