Patents/Inventors

Ching-wei Wu

Nantou CountyTW30 patents

29 Patents

US125800162026
Memory Device
TSMC NANJING COMPANY LIMITED
0 cites
US125800332026
Read-only Memory Method, Layout, and Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US125622132026
Memory Devices Configured with Adaptive Word Line Pulse Adjustment and Methods for Operating the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US125370372026
Integrated Circuit with Asymmetric Arrangements of Memory Arrays
TSMC CHINA COMPANY LIMITED
0 cites
US125121362025
Integrated Circuit with Asymmetric Arrangements of Memory Arrays
TSMC CHINA COMPANY LIMITED
0 cites
US124368582025
Scan Synchronous-write-through Testing Architectures for a Memory Device
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US123863832025
Memory Structure with Optimized Latch Clock Design
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US123620002025
Memory Device and Operating Method Thereof
TSMC Nanjing Company Limited
0 cites
US123620102025
Memory Circuit and Method of Operating Same
TSMC NANJING COMPANY, LIMITED
0 cites
US123408712025
Memory Circuits with Dynamically Adjustable Pulse Widths and Methods for Operating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US122833082025
Memory Device and Method for Operating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US122549192025
Sub-word Line Driver Placement for Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US121909842025
Circuit and Method of Operating the Same
TSMC CHINA COMPANY, LIMITED
0 cites
US121834282024
Memory Circuit and Method of Operating the Same
TSMC CHINA COMPANY, LIMITED
0 cites
US121834322024
Shared Decoder Circuit and Method
TSMC NANJING COMPANY, LIMITED
0 cites
US121842852024
Latch Circuit and Memory Device
TSMC CHINA COMPANY, LIMITED
0 cites
US121760622024
Memory Device
TSMC CHINA COMPANY LIMITED
0 cites
US119291092024
Sub-word Line Driver Placement for Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US118114042023
Latch Circuit, Memory Device and Method
TSMC CHINA COMPANY, LIMITED
0 cites
US117766222023
Circuit and Method of Writing to a Bit Cell
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US117695392023
Integrated Circuit with Asymmetric Arrangements of Memory Arrays
TSMC CHINA COMPANY LIMITED
0 cites
US117341422023
Scan Synchronous-write-through Testing Architectures for a Memory Device
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US117213742023
Control Circuit of Memory Device
TSMC CHINA COMPANY LIMITED
0 cites
US117155052023
Memory Circuit and Method of Operating the Same
TSMC CHINA COMPANY, LIMITED
0 cites
US117051742023
Integrated Circuit with Asymmetric Arrangements of Memory Arrays
TSMC CHINA COMPANY LIMITED
0 cites
US117051752023
Shared Decoder Circuit and Method
TSMC CHINA COMPANY, LIMITED
0 cites
US116703622023
Sub-word Line Driver Placement for Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US116511342023
Method of Certifying Safety Levels of Semiconductor Memories in Integrated Circuits
TSMC CHINA COMPANY, LIMITED
0 cites
US115451912023
Circuit and Method of Operating the Same
TSMC CHINA COMPANY. LIMITED
0 cites