Patents/Inventors

Chin Kun Lan

HsinchuTW8 patents

7 Patents

US123158122025
Semiconductor Structure Having High Breakdown Voltage Etch-stop Layer
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US123102572025
Spacer Scheme and Method for MRAM
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122680962025
Spacer Stack for Magnetic Tunnel Junctions
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US119618032024
Semiconductor Structure Having High Breakdown Voltage Etch-stop Layer
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US118189642023
Spacer Scheme and Method for MRAM
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US117858582023
Methods for Forming a Spacer Stack for Magnetic Tunnel Junctions
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US117696922023
High Breakdown Voltage Inter-metal Dielectric Layer
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites