10 Patents
- 0 cites
- US120756342024RRAM Memory Cell with Multiple Filaments
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118897052024Interconnect Landing Method for RRAM Technology
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118567972023Resistive Switching Random Access Memory with Asymmetric Source and Drain
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118442862023Flat Bottom Electrode via (BEVA) Top Surface for Memory
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117514052023Integrated Circuit and Method for Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117514852023Flat Bottom Electrode via (BEVA) Top Surface for Memory
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117372902023RRAM Memory Cell with Multiple Filaments
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117232922023RRAM Cell Structure with Laterally Offset BEVA/TEVA
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116372392023High Yield RRAM Cell with Optimized Film Scheme
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites