37 Patents
- US125882582026Stacked Transistor Isolation Features and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US125573672026Source/drain Regions Formed Using Metal Containing Block Masks
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US125325182026Transistor Source/drain Regions and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- US124777942025Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124713112025Semiconductor Fin-like Field-effect Transistor (finfet) Device Including Source/drain Structure with Boron Doped Capping Layer
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
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- US123962422025Nano-structure Transistors with Air Inner Spacers and Methods Forming Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123362102025Source/drain Structure for Semiconductor Device
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123362372025Source/drain Regions of Semiconductor Device and Method of Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US122781452025Semiconductor Devices with a Source/drain Barrier Layer and Methods of Manufacture
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US122437832025Epitaxial Source/drain Recess Formation with Metal-comprising Masking Layers and Structures Resulting Therefrom
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US121913932025Low Ge Isolated Epitaxial Layer Growth Over Nano-sheet Architecture Design for RP Reduction
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
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- US120947782024Fin Field-effect Transistor Device and Method of Forming
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120878452024System and Methods of Manufacturing Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120683952024Method for Forming an Undoped Region Under a Source/drain
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120574502024Epitaxy Regions with Large Landing Areas for Contact Plugs
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120028542024Semiconductor Device and Method of Manufacture
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US119425502024Nanosheet Semiconductor Device and Method for Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US118551422023Supportive Layer in Source/drains of Finfet Devices
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US118241202023Method of Fabricating a Source/drain Recess in a Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117735062023Wafer Susceptor with Improved Thermal Characteristics
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117497522023Doping Profile for Strained Source/drain Region
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US117356682023Interfacial Layer Between Fin and Source/drain Region
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US117107772023Semiconductor Device and Method for Manufacture
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116521052023Epitaxy Regions with Large Landing Areas for Contact Plugs
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US115814252023Method for Manufacturing Semiconductor Structure with Enlarged Volumes of Source-drain Regions
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US115750262023Source/drain Structure for Semiconductor Device
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US115690842023Method for Manufacturing Semiconductor Structure with Reduced Nodule Defects
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites