28 Patents
- US126157652026Memory Comprising a Gate Conductive Layer Having a Bent Portion and Manufacturing Method Thereof
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites - US124577292025Method for Forming Capacitor Opening Hole and Method for Forming Memory Capacitor
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites - US124530752025Word Line Structure, Manufacturing Method Thereof and Semiconductor Memory
CHANGXIN MEMORY TECHNOLOGIES, Inc.
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- US122257132025Semiconductor Device, Manufacturing Method of Semiconductor Device, and Storage Device
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites - US121989332025Forming Method of Semiconductor Structure and Semiconductor Structure
CHANGXIN MEMORY TECHNOLOGIES, Inc.
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- US121502932024Bit Line Structure, Manufacturing Method Thereof and Semiconductor Memory
CHANGXIN MEMORY TECHNOLOGIES, Inc.
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- US120875812024Active Region, Active Region Array and Formation Method Thereof
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites - US120626102024Method for Forming Semiconductor Structure and Semiconductor Structure
CHANGXIN MEMORY TECHNOLOGIES, Inc.
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- US119903402024Semiconductor Device and Method of Manufacturing the Same
CHANGXIN MEMORY TECHNOLOGIES, Inc.
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- US119858132024Bit Line Lead-out Structure and Preparation Method Therefor
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites - 0 cites
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- US119160442024Semiconductor Structure and Manufacturing Method Thereof
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites - 0 cites
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- US118622812024Word Line Lead-out Structure and Method for Preparing Same
CHANGXIN MEMORY TCHNOLOGIES, Inc.
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