11 Patents
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- US122551052025Gate-all-around Devices Having Gate Dielectric Layers of Varying Thicknesses and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
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- US120574692024Semiconductor Device and a Method of Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119675322024Gate Spacers and Methods of Forming the Same in Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119423752024Structure and Formation Method of Semiconductor Device with Fin Structures
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119088962024Integrated Circuit Structure with Non-gated Well Tap Cell
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd
0 cites - US117912172023Gate Structure and Method with Dielectric Gates and Gate-cut Features
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117283732023High Density Capacitor Implemented Using Finfet
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
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