5 Patents
- US123362102025Source/drain Structure for Semiconductor Device
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US121913932025Low Ge Isolated Epitaxial Layer Growth Over Nano-sheet Architecture Design for RP Reduction
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US118551422023Supportive Layer in Source/drains of Finfet Devices
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US117356682023Interfacial Layer Between Fin and Source/drain Region
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US115750262023Source/drain Structure for Semiconductor Device
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites