9 Patents
- US124462542025Semiconductor Device and Methods of Forming Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124143632025Semiconductor Device and Manufacturing Methods Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124023932025Finfet EPI Channels Having Different Heights on a Stepped Substrate
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US121659242024Semiconductor Devices Having Merged Source/drain Features and Methods of Fabrication Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119359552024Semiconductor Device and Methods of Forming Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117768512023Semiconductor Device with Multi-layered Source/drain Regions Having Different Dopant Concentrations and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117217602023Dopant Concentration Boost in Epitaxially Formed Material
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117053712023Semiconductor Devices Having Merged Source/drain Features and Methods of Fabrication Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US115453992023Finfet EPI Channels Having Different Heights on a Stepped Substrate
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites