18 Patents
- US124630402025Methods for Doping High-k Metal Gates for Tuning Threshold Voltages
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124531652025P-type Semiconductor Devices with Different Threshold Voltages and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd
0 cites - US124330112025Post Gate Dielectric Processing for Semiconductor Device Fabrication
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US122940302025Nano-sheet-based Complementary Metal-oxide-semiconductor Devices with Asymmetric Inner Spacers
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US122551042025Semiconductor Device and Method of Manufacture
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US121710912024Multi-layer High-k Gate Dielectric Structure
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US121426572024Gate Structure for Multi-gate Device and Related Methods
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121069402024Systems and Methods for Storage and Supply of F3no-free FNO Gases and F3no-free FNO Gas Mixtures for Semiconductor Processes
L'air Liquide, Société Anonyme Pour L'etude Et L'exploitation Des Procédés Georges Claude
0 cites - US120742062024Integrated Circuit Device with Improved Reliability
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120402352024Semiconductor Device and Method of Manufacture
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US120417602024Multi-layer High-k Gate Dielectric Structure
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120226432024Multi-layer High-k Gate Dielectric Structure
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119964842024Nano-sheet-based Complementary Metal-oxide-semiconductor Devices with Asymmetric Inner Spacers
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US117354842023Post Gate Dielectric Processing for Semiconductor Device Fabrication
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites