Patents/Inventors

Chih-yang Chang

Santa Clara, CAUS27 patents

25 Patents

US125727702026
Tracking System on Matrix Two-dimensional Code Labels
Applied Materials Inc.
0 cites
US125657042026
Bimetallic Faceplate for Substrate Processing
Applied Materials Inc.
0 cites
US125535172026
O-ring Mounting Template and Method
Applied Materials, Inc.
0 cites
US124305262025
Method and System for Scanning a Code on a Transparent Part
Applied Materials Inc.
0 cites
US123622112025
Detecting Defects of Semiconductor Manufacturing Assemblies
APPLIED MATERIALS, Inc.
0 cites
US123374152025
Method and Apparatus for Laser Texturing a Component
APPLIED MATERIALS, Inc.
0 cites
US122566522025
Metal Landing on Top Electrode of RRAM
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122323332025
Integrated Circuit
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US122096632025
Sealing Member with Lip Seal
Applied Materials, Inc.
0 cites
US122100552025
Semiconductor Wafer Testing System and Related Method for Improving External Magnetic Field Wafer Testing
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US121564092024
Memory Layout for Reduced Line Loading
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US120756342024
RRAM Memory Cell with Multiple Filaments
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US120400362024
Magnetic Memory Device
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US119440212024
Metal Landing on Top Electrode of RRAM
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US118897052024
Interconnect Landing Method for RRAM Technology
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US118567972023
Resistive Switching Random Access Memory with Asymmetric Source and Drain
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US118442862023
Flat Bottom Electrode via (BEVA) Top Surface for Memory
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US118373122023
Magnetic Memory Device
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US117514052023
Integrated Circuit and Method for Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US117514852023
Flat Bottom Electrode via (BEVA) Top Surface for Memory
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US117372902023
RRAM Memory Cell with Multiple Filaments
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US117267472023
Magnetoresistive Random-access Memory (MRAM) Random Number Generator (RNG) and a Related Method for Generating a Random Bit
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US117197422023
Semiconductor Wafer Testing System and Related Method for Improving External Magnetic Field Wafer Testing
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US117232922023
RRAM Cell Structure with Laterally Offset BEVA/TEVA
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US116784942023
Memory Layout for Reduced Line Loading
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites