16 Patents
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- US124649542025Magneto-resistive Random-access Memory (MRAM) Devices with Self-aligned Top Electrode Via
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123005412025Structure and Formation Method of Semiconductor Device with Carbon-containing Conductive Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
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- US122437752025Double Patterning Approach by Direct Metal Etch
Taiwan Semiconductor Manufacturing Company, Ltd.
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- US119729752024Semiconductor Device Structure Having Air Gap and Method for Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
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- US117232822023Magneto-resistive Random-access Memory (MRAM) Devices with Self-aligned Top Electrode Via
Taiwan Semiconductor Manufacuturing Company, Ltd.
0 cites - US116887822023Semiconductor Structure and Method for Forming the Same
Taiwan Semiconductor Manufacturing Company Ltd.
0 cites - 0 cites
- US115691272023Double Patterning Approach by Direct Metal Etch
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US115631672023Structure and Method for an MRAM Device with a Multi-layer Top Electrode
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
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