8 Patents
- US124329552025Source and Drain Structure with Reduced Contact Resistance and Enhanced Mobility
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US122374032025Structure of a Fin Field Effect Transistor (finfet) Comprising Epitaxial Structures
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120028552024Method of Manufacturing a Semiconductor Device and a Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119844782024Forming Source and Drain Features in Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US116265082023Structure of a Fin Field Effect Transistor (finfet)
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US115945342023Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US115455622023Source and Drain Structure with Reduced Contact Resistance and Enhanced Mobility
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites