4 Patents
- US123408442025Phase-change Memory Cell and Method for Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123362102025Source/drain Structure for Semiconductor Device
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US119785112024Phase-change Memory Cell and Method for Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US115750262023Source/drain Structure for Semiconductor Device
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites