19 Patents
- US125638252026Integrated Circuit Structure with a Reduced Amount of Defects and Methods for Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- 0 cites
- US123362812025Gate Structures Having Neutral Zones to Minimize Metal Gate Boundary Effects and Methods of Fabricating Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US123157382025Method of Forming a Gate Structure Including Semiconductor Material Implantation Into Dummy Gate Stack
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US122940302025Nano-sheet-based Complementary Metal-oxide-semiconductor Devices with Asymmetric Inner Spacers
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US122496362025Tuning Gate Lengths in Multi-gate Field Effect Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122508032025Device and Method for Tuning Threshold Voltage
TAIWAN SEMICONDUCTOR MANUFACTORING COMPANY, Ltd.
0 cites - 0 cites
- US122197472025Memory Active Region Layout for Improving Memory Performance
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121599242024Structure and Method for Multigate Devices with Suppressed Diffusion
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120403252024Integrated Circuit Structure with a Reduced Amount of Defects and Methods for Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US119964842024Nano-sheet-based Complementary Metal-oxide-semiconductor Devices with Asymmetric Inner Spacers
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- 0 cites
- US119088662024Gate Structures Having Neutral Zones to Minimize Metal Gate Boundary Effects and Methods of Fabricating Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd
0 cites - 0 cites
- US117424162023Semiconductor Structure and Method for Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites