5 Patents
- US124313562025Metal Gate Structure and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121007512024Void Elimination for Gap-filling in High-aspect Ratio Trenches
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119617682024CMOS Finfet Structures Including Work-function Materials Having Different Proportions of Crystalline Orientations and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116825892023CMOS Finfet Structures Including Work-function Materials Having Different Proportions of Crystalline Orientations and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116109822023Void Elimination for Gap-filling in High-aspect Ratio Trenches
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites