8 Patents
- 0 cites
- US125325372026Semiconductor Device with a Deep Trench Isolation Structure and Buried Layers for Reducing Substrate Leakage Current and Avoiding Latch-up Effect, and Fabrication Method Thereof
Vanguard International Semiconductor Corporation
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- US124955622025Semiconductor Device and Fabrication Method Thereof
Vanguard International Semiconductor Corporation
0 cites - US122794552025Semiconductor Device and Method of Fabricating the Same
Vanguard International Semiconductor Corporation
0 cites - US117423892023Semiconductor Structure and Method for Forming the Same
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
0 cites - US116371392023Semiconductor Device Including Light-collimating Layer and Biometric Device Using the Same
Vanguard International Semiconductor Corporation
0 cites - US115691212023Methods for Forming Semiconductor Devices
Vanguard International Semiconductor Corporation
0 cites