Patents/Inventors

Chih-chao Yang

Glenmont, NYUS115 patents

100 Patents

US126222482026
Interconnects with Sidewall Barrier Layer Divot Fill
International Business Machines Corporation
0 cites
US126220212026
Semiconductor Structure with Conductive Spacer in Shallow Trench Isolation Region
International Business Machines Corporation
0 cites
US126046712026
Magnetic Tunnel Junction Structure for MRAM
International Business Machines Corporation
0 cites
US126046722026
MRAM Refill Device Structure
International Business Machines Corporation
0 cites
US125989172026
Advanced MRAM Device Structure Having Hyperboloid Shape
International Business Machines Corporation
0 cites
US125989162026
MRAM Device with Self-aligned Bottom Electrodes
International Business Machines Corporation
0 cites
US125989192026
MRAM Device with Hammerhead Profile
International Business Machines Corporation
0 cites
US125989862026
Metal Insulator Metal Capacitor (MIM Capacitor)
International Business Machines Corporation
0 cites
US125936152026
MRAM Device with Wrap-around Top Electrode Contact
International Business Machines Corporation
0 cites
US125936142026
MRAM Device with Annular Electrodes
International Business Machines Corporation
0 cites
US125884212026
Memory Element with a Hardmask Stack Having Different Stress Levels
International Business Machines Corporation
0 cites
US125753292026
Magneto-resistive Random Access Memory with Tapered Sidewalls
International Business Machines Corporation
0 cites
US125687722026
MRAM with a Multi-component, Multi-layer Bottom Electrode
International Business Machines Corporation
0 cites
US125575552026
Magnetic Tunnel Junction with an Etched Bottom Electrode Having Non-planar Sidewalls
International Business Machines Corporation
0 cites
US125507082026
Top via Interconnect with an Embedded Antifuse
International Business Machines Corporation
0 cites
US125507852026
Separated Input/output (I/O) and Shared Power Terminals for a Carrier Wafer with a Built-in Device for Bonding with Another Device Wafer
International Business Machines Corporation
0 cites
US125506212026
Top Contact Structure for Embedded MRAM
International Business Machines Corporation
0 cites
US125506202026
Top Electrode to Metal Line Connection for Magneto-resistive Random-access Memory Stack Height Reduction
International Business Machines Corporation
0 cites
US125387142026
Magneto-resistive Random Access Memory with Laterally-recessed Free Layer
International Business Machines Corporation
0 cites
US125387852026
Fully-aligned and Dielectric Damage-less Top via Interconnect Structure
International Business Machines Corporation
0 cites
US125060492025
Transistors with Backside Source/drain Contact and Spacer
International Business Machines Corporation
0 cites
US124879552025
Data Communication Systems and Methods Thereof
Delta Electronics, Inc.
0 cites
US124827472025
Local Interconnects Having Different Material Compositions
International Business Machines Corporation
0 cites
US124697852025
Backside Power Rail with Tight Space
International Business Machines Corporation
0 cites
US124647312025
Layered Bottom Electrode Dielectric for Embedded MRAM
International Business Machines Corporation
0 cites
US124579072025
Magnetoresistive Random-access Memory with Top and Bottom Electrodes Deposited in Unison
International Business Machines Corporation
0 cites
US124532972025
Recessed Local Interconnect Semiconductor Memory Device
International Business Machines Corporation
0 cites
US124446822025
Locally Widened Profile for Nanoscale Wiring Structure
International Business Machines Corporation
0 cites
US124380392025
Air Gap in Beol Interconnect
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US124380472025
Double Patterning with Selectively Deposited Spacer
International Business Machines Corporation
0 cites
US124331702025
MRAM Structure with a T-shaped Ferromagnetic Layer
International Business Machines Corporation
0 cites
US124144802025
MRAM Bottom Electrode Contact with Taper Profile
International Business Machines Corporation
0 cites
US124143122025
Back-end-of-line Thin Film Resistor
International Business Machines Corporation
0 cites
US124069202025
Top via Interconnect with Airgap
International Business Machines Corporation
0 cites
US124023292025
Top via Containing Random-access Memory Cross-bar Array
International Business Machines Corporation
0 cites
US124025362025
Magneto-resistive Random Access Memory with Hemispherical Top Electrode
International Business Machines Corporation
0 cites
US124009122025
Dual-damascene Fav Interconnects with Dielectric Plug
International Business Machines Corporation
0 cites
US124006982025
MRAM Device with Octagon Profile
International Business Machines Corporation
0 cites
US123898032025
Magnetoresistive Random-access Memory (MRAM) with Preserved Underlying Dielectric Layer
International Business Machines Corporation
0 cites
US123828402025
Damascene MRAM Device
0 cites
US123694942025
MRAM Top Electrode Structure with Liner Layer
International Business Machines Corporation
0 cites
US123639132025
Fabrication of Embedded Memory Devices Utilizing a Self Assembled Monolayer
International Business Machines Corporation
0 cites
US123566382025
Metal-insulator-metal Capacitor Structure with Enlarged Capacitor Area
0 cites
US123495972025
Conical Magnetic Random Access Memory Pillar Structures
International Business Machines Corporation
0 cites
US123495982025
MRAM Device Structure
International Business Machines Corporation
0 cites
US123411002025
Copper Interconnects with Self-aligned Hourglass-shaped Metal Cap
International Business Machines Corporation
0 cites
US123410662025
Advanced Metal Interconnect
International Business Machines Corporation
0 cites
US123427262025
Etching of Magnetic Tunnel Junction (MTJ) Stack for Magnetoresistive Random-access Memory (MRAM)
International Business Machines Corporation
0 cites
US123277702025
Probe Pad with Built-in Interconnect Structure
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US123243582025
Tall Bottom Electrode Structure in Embedded Magnetoresistive Random-access Memory
International Business Machines Corporation
0 cites
US123158072025
Reducing Copper Line Resistance
International Business Machines Corporation
0 cites
US123177522025
MRAM Structure with Multilayer Encapsulation
International Business Machines Corporation
0 cites
US122898962025
Magneto-resistive Random Access Memory with Segmented Bottom Electrode
International Business Machines Corporation
0 cites
US122666052025
Top via Interconnects with Line Wiggling Prevention
International Business Machines Corporation
0 cites
US122508272025
Magneto-resistive Random Access Memory with Substitutional Bottom Electrode
International Business Machines Corporation
0 cites
US122198812025
Dual Layer Top Contact for Magnetic Tunnel Junction Stack
International Business Machines Corporation
0 cites
US122075612025
MRAM Device with Wrap-around Top Electrode
International Business Machines Corporation
0 cites
US121836302024
Additive Interconnect Formation
International Business Machines Corporation
0 cites
US121677002024
Replacement Bottom Electrode Structure for MRAM Devices
International Business Machines Corporation
0 cites
US121442632024
Stepped Contact Within Memory Region
International Business Machines Corporation
0 cites
US121334732024
Contact Structure Formation for Memory Devices
International Business Machines Corporation
0 cites
US121209632024
Contact Structure Formation for Memory Devices
International Business Machines Corporation
0 cites
US121086852024
Multi-diameter Magnetic Random-access Memory Pillar Structure
International Business Machines Corporation
0 cites
US121006532024
Resistance Tunable Fuse Structure Formed by Embedded Thin Metal Layers
International Business Machines Corporation
0 cites
US120876242024
Beol Tip-to-tip Shorting and Time Dependent Dielectric Breakdown
International Business Machines Corporation
0 cites
US120626092024
Electronic Fuse Structure Embedded in Top Via
International Business Machines Corporation
0 cites
US120573952024
Top via Interconnects Without Barrier Metal Between via and Above Line
International Business Machines Corporation
0 cites
US120589422024
MRAM Cell Embedded in a Metal Layer
International Business Machines Corporation
0 cites
US120274162024
BEOL Etch Stop Layer Without Capacitance Penalty
International Business Machines Corporation
0 cites
US120027582024
Backside Metal-insulator-metal (MIM) Capacitors Extending Through Backside Interlayer Dielectric (BILD) Layer or Semiconductor Layer and Partly Through Dielectric Layer
International Business Machines Corporation
0 cites
US120024982024
Coaxial Top MRAM Electrode
International Business Machines Corporation
0 cites
US119904142024
BEOL Alternative Metal Interconnects: Integration and Process
International Business Machines Corporation
0 cites
US119551522024
Dielectric Fill for Tight Pitch MRAM Pillar Array
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US119424242024
Via Patterning for Integrated Circuits
International Business Machines Corporation
0 cites
US119374352024
High Density Two-tier MRAM Structure
International Business Machines Corporation
0 cites
US119375142024
High-density Memory Devices Using Oxide Gap Fill
International Business Machines Corporation
0 cites
US119107222024
Subtractive Top via as a Bottom Electrode Contact for an Embedded Memory
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US119087382024
Interconnect Including Integrally Formed Capacitor
International Business Machines Corporation
0 cites
US119088882024
Metal-insulator-metal Capacitor Structure Supporting Different Voltage Applications
International Business Machines Corporation
0 cites
US119012242024
Rework for Metal Interconnects Using Etch and Thermal Anneal
International Business Machines Corporation
0 cites
US118876412024
Simultaneous Electrodes for Magneto-resistive Random Access Memory Devices
International Business Machines Corporation
0 cites
US118814312024
Anti-fuse with Laterally Extended Liner
International Business Machines Corporation
0 cites
US118814332024
Advanced Copper Interconnects with Hybrid Microstructure
Tessera LLC
0 cites
US118774582024
RRAM Structures in the BEOL
International Business Machines Corporation
0 cites
US118760472024
Decoupled Interconnect Structures
International Business Machines Corporation
0 cites
US118173892023
Multi-metal Interconnects for Semiconductor Device Structures
International Business Machines Corporation
0 cites
US118043782023
Surface Conversion in Chemical Mechanical Polishing
International Business Machines Corporation
0 cites
US117588192023
Magneto-resistive Random Access Memory with Laterally-recessed Free Layer
International Business Machines Corporation
0 cites
US117440832023
Fabrication of Embedded Memory Devices Utilizing a Self Assembled Monolayer
International Business Machines Corporation
0 cites
US117354682023
Interconnect Structures Including Self Aligned Vias
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US117155942023
Vertically-stacked Interdigitated Metal-insulator-metal Capacitor for Sub-20 Nm Pitch
International Business Machines Corporation
0 cites
US116886802023
MIM Capacitor Structures
International Business Machines Corporation
0 cites
US116768942023
Resistance Tunable Fuse Structure Formed by Embedded Thin Metal Layers
International Business Machines Corporation
0 cites
US116768922023
Three-dimensional Metal-insulator-metal Capacitor Embedded in Seal Structure
International Business Machines Corporation
0 cites
US116476812023
Fabrication of Phase Change Memory Cell in Integrated Circuit
International Business Machines Corporation
0 cites
US116370362023
Planarization Stop Region for Use with Low Pattern Density Interconnects
International Business Machines Corporation
0 cites
US116212942023
Embedding MRAM Device in Advanced Interconnects
International Business Machines Corporation
0 cites
US116003252023
Non Volatile Resistive Memory Logic Device
International Business Machines Corporation
0 cites
US115574822023
Electrode with Alloy Interface
International Business Machines Corporation
0 cites
US115575072023
Via Cleaning to Reduce Resistance
International Business Machines Corporation
0 cites