Chih-chao Chou

18 Patents

• US124396382025

  FET with Wrap-around Silicide and Fabrication Methods Thereof

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

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• US124024052025

  Integration of Multiple Fin Stuctures on a Single Substrate

  Taiwan Semiconductor Manufacturing Company, Ltd.

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• US123680782025

  Dual-side Power Rail Design and Method of Making Same

  Taiwan Semiconductor Manufacturing Co., Ltd.

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• US123175422025

  Semiconductor Device with Backside Self-aligned Power Rail and Methods of Forming the Same

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

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• US122372332025

  Backside Power Rail for Physical Failure Analysis (PFA)

  Taiwan Semiconductor Manufacturing Co., Ltd.

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• US121989862025

  Dual Channel Gate All Around Transistor Device and Fabrication Methods Thereof

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

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• US121836782024

  Backside Power Rail Structure and Methods of Forming Same

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

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• US120573852024

  Integrated Circuits with Backside Power Rails

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

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• US119964832024

  FET with Wrap-around Silicide and Fabrication Methods Thereof

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites
• US119730792024

  Integration of Multiple Fin Structures on a Single Substrate

  Taiwan Semiconductor Manufacturing Company, Ltd.

  0 cites
• US119161252024

  Semiconductor Device with Backside Self-aligned Power Rail and Methods of Forming the Same

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• US118551782023

  Semiconductor Devices Having Air-gap

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

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• US118429652023

  Backside Power Rail Structure and Methods of Forming Same

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites
• US117768542023

  Semiconductor Structure with Hybrid Nanostructures

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

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• US117422802023

  Integrated Circuits with Backside Power Rails

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites
• US117215942023

  Dual Channel Gate All Around Transistor Device and Fabrication Methods Thereof

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd

  0 cites
• US116950762023

  FET with Wrap-around Silicide and Fabrication Methods Thereof

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites
• US115631042023

  Semiconductor Devices Having Air-gap Spacers

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

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