18 Patents
- US125686482026Backside Source/drain Contacts and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US125139482025Forming Epitaxial Structures in Fin Field Effect Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd
0 cites - US124777942025Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124713112025Semiconductor Fin-like Field-effect Transistor (finfet) Device Including Source/drain Structure with Boron Doped Capping Layer
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
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- US124023542025Epitaxial Features in Semiconductor Devices and Manufacturing Method of the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123896712025Source/drain Regions of Semiconductor Devices and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123494262025Source/drain Device and Method of Forming Thereof
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- US120807592024Transistor Source/drain Regions and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119905112024Source/drain Device and Method of Forming Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US119425502024Nanosheet Semiconductor Device and Method for Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118044872023Source/drain Regions of Semiconductor Devices and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US116887932023Integrated Circuit Structure and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites