6 Patents
- US125017002025Integrated Circuit, Semiconductor Device Having Stop Segment in Connection Region Between Logic Region and Memory Cell Region
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124083472025Method for Forming a 3-D Semiconductor Memory Structure Comprising Horizontal and Vertical Conductive Lines
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122454322025Memory Device and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121086052024Memory Device and Method of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US119374262024Memory Device and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites