3 Patents
- US122182162025Method for Manufacturing Semiconductor Devices Having Gate Spacers with Bottom Portions Recessed in a Fin
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121258912024Semiconductor Device Having Gate Spacers Extending Below a Fin Top Surface
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US118548252023Gate Structure of Semiconductor Device and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites