8 Patents
- US125575662026Semiconductor Device Having a Switching Layer Including a Compound Having Aluminum, Oxygen, and Nitrogen and Method for Manufacturing the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US125506332026Diffusion Barrier to Mitigate Direct-shortage Leakage in Conductive Bridging Ram (CBRAM)
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124245792025Integrated Chip Including an Upper Conductive Structure Having Multilayer Stack to Decrease Fabrication Costs and Increase Performance
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124179462025Film Scheme to Reduce Plasma-induced Damage
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123693292025Bottom-electrode Interface Structure for Memory
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122117372025Cleaning Chamber for Metal Oxide Removal
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119730502024Method for Forming an Upper Conductive Structure Having Multilayer Stack to Decrease Fabrication Costs and Increase Performance
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117929962023Bottom-electrode Interface Structure for Memory
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites