5 Patents
- 0 cites
- US124713102025Method of Making a Finfet Device Including a Step of Removing a Portion of a Fin
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120681992024Methods for Forming Fin Field-effect Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119089392024Method of Making a Finfet Device Including a Step of Recessing a Subset of the Fins
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116705522023Methods for Forming Fin Field-effect Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites