61 Patents
- US125882832026Semiconductor Structure and Related Methods
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US125816912026Methods of Manufacturing Semiconductor Devices and Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US125433612026Gate-all-around Transistor Having Inner Space Lined by a Semiconductor Liner and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US125385322026Method of Forming a Gap Under a Source/drain Feature of a Multi-gate Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124713062025Semiconductor Device Active Region Profile and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124647692025Semiconductor Device with Epitaxial Bridge Feature and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US124577702025Source and Drain Engineering Process for Multigate Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124531272025Methods of Manufacturing Semiconductor Devices and Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124329902025Epitaxial Source/drain Feature with Enlarged Lower Section Interfacing with Backside Via
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US124262972025Method and Structure for Air Gap Inner Spacer in Gate-all-around Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US124083772025Semiconductor Device Structure with Backside Contact
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124023542025Epitaxial Features in Semiconductor Devices and Manufacturing Method of the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124023642025Semiconductor Device Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123962202025Isolation Structures in Multi-gate Field-effect Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123826602025Structure and Formation Method of Semiconductor Device with Embedded Epitaxial Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123827032025Spacer Features for Nanosheet-based Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123693342025Method of Manufacturing a Semiconductor Device and a Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123693832025Semiconductor Structure with Gate-all-around Devices and Stacked Finfet Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123639502025Nano-fet Semiconductor Device and Method of Forming
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123639882025Inner Spacer Features for Multi-gate Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123639892025Semiconductor Device with Leakage Current Suppression and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123566622025Asymmetric Source/drain for Backside Source Contact
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123175522025Semiconductor Device Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123082872025Integrated Circuit Structure with Backside Dielectric Layer Having Air Gap
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123100572025Semiconductor Devices Including Backside Vias and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123026152025Epitaxial Structures Exposed in Airgaps for Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122781452025Semiconductor Devices with a Source/drain Barrier Layer and Methods of Manufacture
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US122794512025Semiconductor Device Including Source/drain Feature with Multiple Epitaxial Layers
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US122727292025Asymmetric Source/drain for Backside Source Contact
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122680232025Devices with Improved Operational Current and Reduced Leakage Current
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122372302025Semiconductor Device with Leakage Current Suppression and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122372322025Methods for Forming Source/drain Features
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
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- US121913692025Source and Drain Engineering Process for Multigate Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121913702025Semiconductor Device with Tunable Channel Layer Usage and Methods of Fabrication Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121913792025Multi-gate Semiconductor Device with Inner Spacer and Fabrication Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121426472024Self-aligning Backside Contact Process and Devices Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121258892024Source/drain Contact with Low-k Contact Etch Stop Layer and Method of Fabricating Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120878372024Semiconductor Device with Backside Contact and Methods of Forming Such
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120878422024Inner Spacer Features for Multi-gate Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120807592024Transistor Source/drain Regions and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120807752024Semiconductor Device and Forming Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120517322024Semiconductor Structure and Method for Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120404072024Semiconductor Devices Including Backside Vias and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120276262024Semiconductor Device Active Region Profile and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US120150602024Structure and Formation Method of Semiconductor Device with Backside Contact
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US120028452024Method of Manufacturing a Semiconductor Device and a Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119731222024Nano-fet Semiconductor Device and Method of Forming
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US119357812024Integrated Circuit Structure with Backside Dielectric Layer Having Air Gap
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US119234092024Epitaxial Structures Exposed in Airgaps for Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119012362024Semiconductor Structure with Gate-all-around Devices and Stacked Finfet Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118552202023Method and Structure for Air Gap Inner Spacer in Gate-all-around Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US118552252023Semiconductor Device with Epitaxial Bridge Feature and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117990022023Semiconductor Devices and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117914022023Semiconductor Device Having Strained Channels
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116827142023Inner Spacer Features for Multi-gate Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116317362023Epitaxial Source/drain Feature with Enlarged Lower Section Interfacing with Backside Via
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US115750472023Semiconductor Device Active Region Profile and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites