68 Patents
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- US126105842026Selective Growth of High-k Oxide on Channel of Gate-all-around Transistors
Intel Corporation
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- US126098782026Self-diagnosing System and Method for Connection Status of Devices, and Non-transitory Storage Medium
DELTA ELECTRONICS, Inc.
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- US124827532025Semiconductor Device Having Redistribution Layers Formed on an Active Wafer and Methods of Making the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US124844572025Differentially Programmable Magnetic Tunnel Junction Device and System Including Same
Intel Corporation
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- US124579102025Magnetoelectric Spin-orbit Device with In-plane and Perpendicular Magnetic Layers and Method of Manufacturing Same
Intel Corporation
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- US124379292025Capacitor with an Electrically Conductive Layer Coupled with a Metal Layer of the Capacitor
Intel Corporation
0 cites - US124331722025Spin-orbit Readout Using Transition Metal Dichalcogenides and Proximitized Graphene
Intel Corporation
0 cites - US124067132025Probabilistic Computing Devices Based on Stochastic Switching in a Ferroelectric Field-effect Transistor
Intel Corporation
0 cites - US123962172025Encapsulation for Transition Metal Dichalcogenide Nanosheet Transistor and Methods of Fabrication
Intel Corporation
0 cites - US123494422025Thin Film Transistors Having Semiconductor Structures Integrated with 2D Channel Materials
Intel Corporation
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- US122667202025Transistors with Monocrystalline Metal Chalcogenide Channel Materials
Intel Corporation
0 cites - US122667122025Transition Metal Dichalcogenide Nanosheet Transistors and Methods of Fabrication
Intel Corporation
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- US121258932024Piezo-resistive Transistor Based Resonator with Anti-ferroelectric Gate Dielectric
Intel Corporation
0 cites - US121258952024Transition Metal Dichalcogenide (TMD) Layer Stack for Transistor Applications and Methods of Fabrication
Intel Corporation
0 cites - US121131172024Piezo-resistive Transistor Based Resonator with Ferroelectric Gate Dielectric
Intel Corporation
0 cites - US121007312024Crystalline Bottom Electrode for Perovskite Capacitors and Methods of Fabrication
Intel Corporation
0 cites - US120403782024Ferroelectric or Anti-ferroelectric Trench Capacitor with Spacers for Sidewall Strain Engineering
Intel Corporation
0 cites - US120090182024Transition Metal Dichalcogenide Based Spin Orbit Torque Memory Device
Intel Corporation
0 cites - US119800372024Memory Cells with Ferroelectric Capacitors Separate from Transistor Gate Stacks
Intel Corporation
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- US118189632023Nano-rod Spin Orbit Coupling Based Magnetic Random Access Memory with Shape Induced Perpendicular Magnetic Anisotropy
Intel Corporation
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- US117697892023MFM Capacitor with Multilayered Oxides and Metals and Processes for Forming Such
Intel Corporation
0 cites - US117424072023Multilayer High-k Gate Dielectric for a High Performance Logic Transistor
Intel Corporation
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- US116659752023Spin Orbit Coupling Memory Device with Top Spin Orbit Coupling Electrode and Selector
Intel Corporation
0 cites - US1164429620233D Measuring Equipment and 3D Measuring Method
Industrial Technology Research Institute
0 cites - US116463562023Piezo-resistive Transistor Based Resonator with Anti-ferroelectric Gate Dielectric
Intel Corporation
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- US116371912023Piezo-resistive Transistor Based Resonator with Ferroelectric Gate Dielectric
Intel Corporation
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- US115942702023Perpendicular Spin Injection via Spatial Modulation of Spin Orbit Coupling
Intel Corporation
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- US115750832023Insertion Layer Between Spin Hall Effect or Spin Orbit Torque Electrode and Free Magnet for Improved Magnetic Memory
Intel Corporation
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- US115577172023Transition Metal Dichalcogenide Based Spin Orbit Torque Memory Device with Magnetic Insulator
Intel Corporation
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