13 Patents
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- US124329632025Device Having an Air Gap Adjacent to a Contact Plug and Covered by a Doped Dielectric Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
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- US124083152025Flexible Merge Scheme for Source/drain Epitaxy Regions
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123621872025Semiconductor Device Having a Uniform and Thin Silicide Layer on an Epitaxial Source/drain Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123560642025Measurement Assistance System and Method
NATIONAL KAOHSIUNG UNIVERSITY OF SCIENCE AND TECHNOLOGY
0 cites - US122372312025FINFET Device with Wrapped-around Epitaxial Structure and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY CO., Ltd.
0 cites - US120516282024Semiconductor Device with Funnel Shape Spacer and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119698152024Automatic Material Changing and Welding System and Method for Stamping Materials
NATIONAL KAOHSIUNG UNIVERSITY OF SCIENCE AND TECHNOLOGY
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- US119515782024Cutting Fluid Digital Monitoring Management System and Method
NATIONAL KAOHSIUNG UNIVERSITY OF SCIENCE AND TECHNOLOGY
0 cites - US119014552024Method of Manufacturing a Finfet by Implanting a Dielectric with a Dopant
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118567432023Flexible Merge Scheme for Source/drain Epitaxy Regions
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites