4 Patents
- US125325182026Transistor Source/drain Regions and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- US123962422025Nano-structure Transistors with Air Inner Spacers and Methods Forming Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123639452025Method of Forming Source/drain Regions with Quadrilateral Layers
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites