4 Patents
- US123898142025High Electron Affinity Dielectric Layer to Improve Cycling
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116965212023High Electron Affinity Dielectric Layer to Improve Cycling
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116318102023Bottom Electrode Structure in Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US115946322023Wakeup-free Ferroelectric Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites