Patents/Inventors

Cheng-han Lee

New Taipei CityTW49 patents

43 Patents

US126158012026
Multi-gate Transistors Having Deep Inner Spacers
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US126106062026
Methods of Forming Gate Structures with Uniform Gate Length
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US126046792026
Deposition Equipment with Adjustable Temperature Source
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US124330102025
Source/drain Structure for Semiconductor Fin Field Effect Transistor (finfet) Device Having Graded Germanium
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US124329532025
Finfet Structures and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US124023932025
Finfet EPI Channels Having Different Heights on a Stepped Substrate
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US123896382025
Method of Forming Fully Strained Channels
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US123362662025
Methods of Forming Gate Structures with Uniform Gate Length
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US122772892025
Touch Module and Touch Screen Using Same
EGALAX_EMPIA TECHNOLOGY Inc.
0 cites
US122496502025
Finfet Device and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122247862025
Dynamic Tuning Method for SAR and User Equipment Thereof
MEDIATEK Inc.
0 cites
US122184312025
Antenna Subsystem with Improved Radiation Performances
MEDIATEK Inc.
0 cites
US122117522025
Finfet Device and Method of Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121549512024
Germanium Tin Gate-all-around Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US121487942024
Method of Manufacturing a Semiconductor Device and a Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121426812024
Semiconductor Device Having a Shaped Epitaxial Region with Shaping Section
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121426832024
Method of Manufacturing a Semiconductor Device and a Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121292732024
Compound with Analgesic Effect for Use in Prevention and Treatment of Pain
ACADEMIA SINICA
0 cites
US121259152024
Source/drain Features of Multi-gate Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121193942024
Method of Manufacturing a Semiconductor Device and a Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121133052024
Method and Apparatus Augmenting Functionality of Antenna-in-module of User Equipment to Proximity Detection Besides Wireless Communication
MEDIATEK Inc.
0 cites
US120807612024
Fully Strained Channel
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US120275972024
Semiconductor Device Structure and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120211422024
Method of Forming Source/drain Epitaxial Stacks
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US120211432024
P-type Strained Channel in a Fin Field Effect Transistor (finfet) Device
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US120198362024
Touch Screen and Touch Sensitive Processing Apparatus and Method Thereof
EGALAX EMPIA TECHNOLOGY Inc.
0 cites
US120092082024
Deposition Equipment with Adjustable Temperature Source
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119952762024
Touch Sensitive Structure and Touch Sensitive Processing Apparatus, Method and Electronic System Thereof
EGALAX_EMPIA TECHNOLOGY Inc.
0 cites
US119731272024
Semiconductor Structure with Source/drain Structure Having Modified Shape
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119489882024
Source/drain Structure for Semiconductor Device
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US118174992023
P-type Strained Channel in a Fin Field Effect Transistor (finfet) Device
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US117768512023
Semiconductor Device with Multi-layered Source/drain Regions Having Different Dopant Concentrations and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US117534322023
Compound with Analgesic Effect for Use in Prevention and Treatment of Pain
ACADEMIA SINICA
0 cites
US117217602023
Dopant Concentration Boost in Epitaxially Formed Material
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US116706812023
Method of Forming Fully Strained Channels
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US116628442023
Touch Sensitive Processing Apparatus, Method and Electronic System
EGALAX_EMPIA TECHNOLOGY Inc.
0 cites
US116462312023
Semiconductor Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
0 cites
US116265182023
Finfet Device and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US116007032023
Germanium Tin Gate-all-around Device
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US115814112023
Semiconductor Device Structure and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US115693832023
Method of Forming Source/drain Epitaxial Stacks
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US115457352023
Antenna Structure and Wireless Communication Device Using Same
Chiun Mai Communication Systems, Inc.
0 cites
US115453992023
Finfet EPI Channels Having Different Heights on a Stepped Substrate
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites