Cheng Gan

7 Patents

• US123896112025

  Structure and Method for Forming Capacitors for a Three-dimensional NAND

  Yangtze Memory Technologies Co., Ltd.

  0 cites
• US122782092025

  Peripheral Circuit Having Recess Gate Transistors and Method for Forming the Same

  YANGTZE MEMORY TECHNOLOGIES CO., Ltd.

  0 cites
• US122551642025

  Structure and Method for Isolation of Bit-line Drivers for a Three-dimensional NAND

  Yangtze Memory Technologies Co., Ltd.

  0 cites
• US121836982024

  Structure and Method for Isolation of Bit-line Drivers for a Three-dimensional NAND

  Yangtze Memory Technologies Co., Ltd.

  0 cites
• US121364492024

  Capacitor Structure and Method of Forming the Same

  YANGTZE MEMORY TECHNOLOGIES CO., Ltd.

  0 cites
• US120894132024

  Peripheral Circuit Having Recess Gate Transistors and Method for Forming the Same

  YANGTZE MEMORY TECHNOLOGIES CO., Ltd.

  0 cites
• US118876462024

  Capacitor Structure and Method of Forming the Same

  Yangtze Memory Technologies Co., Ltd.

  0 cites