11 Patents
- US124023782025Semiconductor Arrangement Including First and Second Gate Electrodes and Method of Manufacture
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US123175842025Method of Forming High Voltage Transistor and Structure Resulting Therefrom
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - 0 cites
- US121441732024Seal Method to Integrate Non-volatile Memory (NVM) Into Logic or Bipolar CMOS DMOS (BCD) Technology
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121145032024Integrated Chip Including a Tunnel Dielectric Layer Which Has Different Thicknesses Over a Protrusion Region of a Substrate
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US119905452024Semiconductor Device Having Fully Oxidized Gate Oxide Layer and Method for Making the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118944252024Semiconductor Arrangement and Method of Manufacture
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US117119172023Seal Method to Integrate Non-volatile Memory (NVM) Into Logic or Bipolar CMOS DMOS (BCD) Technology
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116888052023Integrated Circuit Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US115750082023Semiconductor Arrangement and Method of Manufacture
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
0 cites