Chenfei Shen

3 Patents

• US123052782025

  Method of Reducing Titanium Nitride Etching During Tungsten Film Formation

  Applied Materials, Inc.

  0 cites
• US120625452024

  Fluorine-free Tungsten ALD for Dielectric Selectivity Improvement

  Applied Materials, Inc.

  0 cites
• US118307252023

  Method of Cleaning a Structure and Method of Depositing a Capping Layer in a Structure

  Applied Materials, Inc.

  0 cites