Patents/Inventors

Chenchen Jacob Wang

HsinchuTW23 patents

23 Patents

US125934592026
Backside Memory Integration
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US125016262025
Magnetic Device Structure and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US124191972025
Memory Device and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US123638942025
Method for Fabricating Three-dimensional Memory
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122951452025
Memory Device and Methods of Forming Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US122508292025
Memory Device, and Integrated Circuit Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US122454362025
Device Structure Including Field Effect Transistors and Ferroelectric Capacitors
Taiwan Semiconductor Manufacturing Company Limited
0 cites
US122257332025
System-on-chip with Ferroelectric Random Access Memory and Tunable Capacitor
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US122074782025
Memory Device and Methods of Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US121932422025
Multi-level Magnetic Tunnel Junction nor Device with Wrap-around Gate Electrodes and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites
US121019392024
Three-dimensional Memory Device with Ferroelectric Material
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US120226642024
Magnetic Device Structure and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120025342024
Memory Array Word Line Routing
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US119918872024
Three-dimensional Memory
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119031892024
Three-dimensional Memory and Fabricating Method Thereof
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US118643922024
Multi-level Magnetic Tunnel Junction NOR Device with Wrap-around Gate Electrodes and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites
US118643932024
Memory Device, Integrated Circuit Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US117299942023
Structures for Testing Nanoscale Devices Including Ferroelectric Capacitors and Methods for Forming the Same
0 cites
US116316982023
Three-dimensional Memory Device with Ferroelectric Material
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US115813362023
Semiconductor Memory Structure and Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US115813682023
Memory Device, Integrated Circuit Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US115749282023
Semiconductor Memory Structure and Method for Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US115630062023
Semiconductor Structure and Method for Manufacturing Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites