13 Patents
- US124397092025Image Sensor with Diffusion Barrier Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123693522025Thin Film Transfer Using Substrate with Etch Stop Layer and Diffusion Barrier Layer
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123277232025Passive Cap for Germanium-containing Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123289652025In-situ Cap for Germanium Photodetector
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123082302025High Electron Mobility Transistor (HEMT) Having an Indium-containing Layer and Method of Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121366792024Semiconductor Device Comprising a Photodetector with Reduced Dark Current
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120740362024Multi-layered Polysilicon and Oxygen-doped Polysilicon Design for RF SOI Trap-rich Poly Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119844862024Method of Implanting Dopants Into a Group Iii-nitride Structure and Device Formed
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119490302024In-situ Cap for Germanium Photodetector
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118045312023Thin Film Transfer Using Substrate with Etch Stop Layer and Diffusion Barrier Layer
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117497622023Semiconductor Device Comprising a Photodetector with Reduced Dark Current
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US115946062023Method of Implanting Dopants Into a Group Iii-nitride Structure and Device Formed
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US115519272023High Electron Mobility Transistor (HEMT) Having an Indium-containing Layer and Method of Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites