4 Patents
- 0 cites
- US123639382025Cap Structure Coupled to Source to Reduce Saturation Current in HEMT Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121007572024Cap Structure Coupled to Source to Reduce Saturation Current in HEMT Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117424192023Cap Structure Coupled to Source to Reduce Saturation Current in HEMT Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites