Patents/Inventors

Chelsey Dorow

Portland, ORUS14 patents

15 Patents

US125882572026
2D Layered Gate Oxide
Intel Corporation
0 cites
US125751112026
Back-end-of-line 2D Memory Cell
Intel Corporation
0 cites
US124329762025
Thin Film Transistors Having Strain-inducing Structures Integrated with 2D Channel Materials
Intel Corporation
0 cites
US123962172025
Encapsulation for Transition Metal Dichalcogenide Nanosheet Transistor and Methods of Fabrication
Intel Corporation
0 cites
US123962542025
Stacked 2D CMOS with Inter Metal Layers
Intel Corporation
0 cites
US123693822025
Integrated Circuit Structures with Graphene Contacts
Intel Corporation
0 cites
US123494382025
Contact Gating for 2D Field Effect Transistors
Intel Corporation
0 cites
US123494422025
Thin Film Transistors Having Semiconductor Structures Integrated with 2D Channel Materials
Intel Corporation
0 cites
US122782892025
TMD Inverted Nanowire Integration
Intel Corporation
0 cites
US122667122025
Transition Metal Dichalcogenide Nanosheet Transistors and Methods of Fabrication
Intel Corporation
0 cites
US122667202025
Transistors with Monocrystalline Metal Chalcogenide Channel Materials
Intel Corporation
0 cites
US121763882024
Transition Metal Dichalcogenide Nanowires and Methods of Fabrication
Intel Corporation
0 cites
US121258952024
Transition Metal Dichalcogenide (TMD) Layer Stack for Transistor Applications and Methods of Fabrication
Intel Corporation
0 cites
US119359562024
TMD Inverted Nanowire Integration
Intel Corporation
0 cites
US119089502024
Charge-transfer Spacers for Stacked Nanoribbon 2D Transistors
Intel Corporation
0 cites