13 Patents
- US125817042026Semiconductor Device Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US125385322026Method of Forming a Gap Under a Source/drain Feature of a Multi-gate Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124531272025Methods of Manufacturing Semiconductor Devices and Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123082872025Integrated Circuit Structure with Backside Dielectric Layer Having Air Gap
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123100572025Semiconductor Devices Including Backside Vias and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US122551022025Methods of Forming of Inner Spacer Structure Using Semiconductor Material with Variable Germanium Concentration
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US120404072024Semiconductor Devices Including Backside Vias and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120149192024Dielectric Layer, Interconnection Structure Using the Same, and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119357812024Integrated Circuit Structure with Backside Dielectric Layer Having Air Gap
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US118627092024Inner Spacer Structure and Methods of Forming Such
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US116161332023Fin Field-effect Transistor Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites