Patents/Inventors

Che-hao Chang

HsinchuTW35 patents

31 Patents

US125882312026
Method of Gap Filling for Semiconductor Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US125504022026
Nanostructure Field-effect Transistor Device and Method of Forming
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US125433432026
Semiconductor Structure and Method for Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US125325102026
Profile Control of Isolation Structures in Semiconductor Devices
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US125016972025
Methods of Forming Semiconductor Devices
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US124955682025
Dummy Fin Structures and Methods of Forming Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US124777752025
Nanostructure Field-effect Transistor Device and Method of Forming
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US124263352025
Reducing K Values of Dielectric Films Through Anneal
Taiwan Semiconductor Manufacturing Co., Ltd.
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US123639792025
Nanosheet Field-effect Transistor Device Including Multi-layer Spacer Film and Method of Forming
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US123242082025
Method for Manufacturing Semiconductor Device Including Annealing Treatment of Inner Spacer Layer
Taiwan Semiconductor Manufacturing Co., Ltd.
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US122888142025
Semiconductor Device and Method of Manufacture
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US122727352025
Transistor Gate Structures and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
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US122496392025
Semiconductor Device Including Multiple Inner Spacers with Different Etch Rates and Method of Making
Taiwan Semiconductor Manufacturing Co., Ltd.
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US122182212025
Semiconductor Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US122060122025
Reducing K Values of Dielectric Films Through Anneal
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US122060132025
Post-formation Mends of Dielectric Features
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US120878432024
Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120209912024
High-k Gate Dielectric and Method Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US120150312024
Semiconductor Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US120094072024
Nanosheet Field-effect Transistor Device and Method of Forming
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US119423292024
Formation Method of Semiconductor Device with Dielectric Isolation Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US119234322024
Semiconductor Device and Method
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US119161322024
Semiconductor Device and Method of Manufacture
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US119014392024
Semiconductor Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US118241042023
Method of Gap Filling for Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US117570202023
Semiconductor Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US117107822023
Post-formation Mends of Dielectric Features
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US116996212023
Method for Patterning a Lanthanum Containing Layer
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US116827112023
Semiconductor Device Having Multi-layered Gate Spacers
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US116644412023
Nanosheet Field-effect Transistor Device and Method of Forming
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US115455592023
Semiconductor Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites