48 Patents
- US125433682026Structure of Semiconductor Device Structure Having Fins
Parabellum Strategic Opportunities Fund LLC
0 cites - US125387742026Interconnection Structure with Anti-adhesion Layer
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US124761412025Fin Field Effect Transistor (finfet) Device Structure with Interconnect Structure
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
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- US123896692025Enlarging Spacer Thickness by Forming a Dielectric Layer Over a Recessed Interlayer Dielectric
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US123288972025Structure and Formation Method of Semiconductor Device Structure
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US122782332025Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
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- US122374172025Finfet Device and Method of Forming and Monitoring Quality of the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
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- US122118422025Method for Manufacturing Finfets by Fin-recessing Processes to Form V-shaped Concaves and Rounded Concaves Into Gate Stacks
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121764242024Finfet Device Comprising Plurality of Dummy Protruding Features
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121660402024Integrated Circuit and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
0 cites - US121257512024Method and Structure for Finfet Isolation
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US120573432024Finfet Devices with Embedded Air Gaps and the Fabrication Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120517522024Embedded Source or Drain Region of Transistor with Downward Tapered Region Under Facet Region
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - 0 cites
- US119731442024Method of Manufacturing a Semiconductor and a Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119488352024Interconnection Structure with Anti-adhesion Layer
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119358892024Fin Structure and Method of Forming Same Through Two-step Etching Processes
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US118548832023Interconnect Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US118552172023Semiconductor Device Having a Conductive Contact in Direct Contact with an Upper Surface and a Sidewall of a Gate Metal Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
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- US118044842023Finfet Isolation Structure and Method for Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
0 cites - US117840552023Method of Forming Semiconductor Device with Fin Isolation
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117841852023Source/drain Regions in Fin Field Effect Transistors (finfets) and Methods of Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US117768532023Semiconductor Device and Method of Manufacture
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117217462023Method and Structure for Finfet Comprising Patterned Oxide and Dielectric Layer Under Spacer Features
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117217622023Fin Field Effect Transistor (finfet) Device and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117055192023Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US116827162023Structure of Semiconductor Device Structure Having Fins
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
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- US116317482023Structure and Formation Method of Semiconductor Device Structure with Gate Stack
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US116055642023Method and Structure for Finfet Isolation
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US115946342023Fin Field Effect Transistor (finfet) Device Structure with Stop Layer and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US115946352023Embedded Source or Drain Region of Transistor with Downward Tapered Region Under Facet Region
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US115455722023Embedded Source or Drain Region of Transistor with Downward Tapered Region Under Facet Region
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
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